1SS355_11 Datasheet, PDF (1/5 Pages) Rohm – Switching Diode

®
TAK CHEONG
200mW SOD-323 SURFACE MOUNT
Small Outline Flat Lead Plastic Package
High Speed Switching Diode
SEMICONDUCTOR
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation
200
mW
T_STG
Storage Temperature Range
-65 to +150
°C
T_J
Operating Junction Temperature
+150
°C
V_R
Reverse Voltage
80
V
VRM
Repetitive Peak Reverse Voltage
90
V
IFM
Forward Current
250
mA
IO
Continuous Forward Current
150
mA
I_FRM
Repetitive Peak Forward Current
500
mA
IFSM
Peak Forward Surge Current
(Pulse Width=1us)
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
ƒ High Speed Switching Device (TRR <4.0 nS)
ƒ General Purpose Diodes
ƒ Flat Lead SOD-323 Small Outline Plastic Package
ƒ Surface Device Type Mounting
ƒ RoHS Compliant
ƒ Green EMC
ƒ Matte Tin(Sn) Lead Finish
ƒ Band Indicates Cathode
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
BV
Breakdown Voltage
IR
Reverse Leakage Current
VF
Forward Voltage
TRR
Reverse Recovery Time
C
Capacitance
DEVICE MARKING CODE:
Device Type
Device
Marking
1SS355
S4
Test Condition
IR=100µA
VR=80V
IF=100mA
I_F=10mA
VR=6V
R_L=100Ω
V_R=0.5V, f=1M_HZ
Limits
Min Max
80
100
1.2
4
4
Unit
Volts
nA
Volts
nS
pF
Number: DB-010
July 2011 Release, Revision F
Page 1