1SS355 Datasheet, PDF (1/4 Pages) Rohm – Switching diode

®
TAK CHEONG
200mW SOD-323 SURFACE MOUNT
Small Outline Flat Lead Plastic Package
High Speed Switching Diode
SEMICONDUCTOR
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation
200
mW
T_STG
Storage Temperature Range
-65 to +150
°C
T_J
Operating Junction Temperature
+150
°C
V_R
Reverse Voltage
80
V
VRM
Repetitive Peak Reverse Voltage
90
V
IFM
Forward Current
250
mA
IO
Continuous Forward Current
150
mA
I_FRM
Repetitive Peak Forward Current
500
mA
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
ƒ High Speed Switching Device (T_RR <4.0 nS)
ƒ General Purpose Diodes
ƒ Flat Lead SOD-323 Small Outline Plastic Package
ƒ Surface Device Type Mounting
ƒ RoHS Compliant
ƒ Green EMC
ƒ Matte Tin(Sn) Lead Finish
ƒ Band Indicates Cathode
Electrical Characteristics
T_A = 25°C unless otherwise noted
Symbol
Parameter
B_V
Breakdown Voltage
I_R
Reverse Leakage Current
V_F
Forward Voltage
T_RR
Reverse Recovery Time
C
Capacitance
DEVICE MARKING CODE:
Device Type
Device
Marking
1SS355
S4
Test Condition
I_R=100µA
V_R=80V
I_F=100mA
I_F=10mA
V_R=6V
RL=100Ω
VR=0.5V, f=1MHZ
Limits
Min Max
80
100
1.2
4
4
Unit
Volts
nA
Volts
nS
pF
Oct 2008 Release, Revision E
Page 1