MMBD2836GH Datasheet, PDF (1/2 Pages) Zowie Technology Corporation – Monolithic Dual Switching Diode

Zowie Technology Corporation
Monolithic Dual Switching Diode
3
MMBD2836GH
1
2
SOT-23
ORDERING INFORMATION
Device
LMBD2835LT1G
LMBD2835LT3G
LMBD2836LT1G
LMBD2836LT3G
Marking
A3X
A3X
A2X
A2X
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Peak Reverse Voltage
D.C Reverse Voltage
Peak Forward Current
LMBD2835LT1G
LMBD2836LT1G
Symbol
V RM
VR
I FM
Average Rectified Current
IO
Value
75
35
75
450
300
150
100
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board ⁽¹⁾
T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, ⁽²⁾ T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θ JA
PD
R θ JA
T J , T stg
Max
225
1.8
556
300
2.4
417
–55 to +150
ANODE
3
Unit
Vdc
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
CATHODE
1
2
CATHODE
DEVICE MARKING
LMBD2835LT1G = A3X;LMBD2836LT1G=A2X
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)( EACH DIODE )
Characteristic
Symbol
Min
Max
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I R = 100 µAdc) LMBD2835LT1G V (BR)
35
—
LMBD2836LT1G
75
—
Reverse Voltage Leakage Current
IR
(V R = 30 Vdc)
LMBD2835LT1G
—
100
(V R = 50 Vdc)
LMBD2836LT1G
—
100
Diode Capacitance
(V R = 0, f = 1.0 MHz)
CT
—
4.0
Forward Voltage(I F = 10 mAdc)
VF
—
1.0
(I F = 50 mAdc)
—
1.0
(I F = 100 mAdc)
—
1.2
Reverse Recovery Time(I F = I R = 10 mAdc, I = R(REC) 1.0mAdc) (Figure 1)
t rr
—
4.0
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2011/05
Unit
Vdc
nAdc
pF
Vdc
ns
Zowie Technology Corporation