TIP120 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(5.0A,60-100V,65W)

Darlington Power Transistors (NPN)
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
TIP120/121/122
Symbol
Description
*hFE
D.C. Current Gain
*VCEO(sus)
Collector-Emitter Sustaining
Voltage
TIP120
TIP121
TIP122
*VCE(sat) Collector-Emitter Saturation Voltage
*VBE(on) Base-Emitter On Voltage
ICEO
Collector-Emitter Cut-off
Current
TIP120
TIP121
TIP122
ICBO
Collector-Base Cut-off
Current
TIP120
TIP121
TIP122
IEBO
Emitter-Base Cut-off Current
hfe
Small Signal Current Gain
Cob
Output Capacitance
ton
Turn on time
toff
Turn off time
*Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Min.
Max.
1000
-
1000
-
60
-
80
-
100
-
-
2.0
-
4.0
-
2.5
-
0.5
-
0.5
-
0.5
-
0.2
-
0.2
-
0.2
-
2
4.0
-
-
200
Typ. 0.4
Typ. 1.2
Unit
Conditions
VCE=3V, IC=0.5A
VCE=3V, IC=3A
V
V
IC=100mA, IB=0
V
V
IC=3A, IB=12mA
V
IC=5A, IB=20mA
V
IC=3A, VCE=3V
VCE=30V, IB=0
mA
VCE=40V, IB=0
VCE=50V, IB=0
VCB=60V, IE=0
mA
VCB=80V, IE=0
VCB=100V, IE=0
mA
VEB=5V, IC=0
IC=3A, VCE=4V,
f=1.0MHz,
pF
VCB=10V, IE=0,
f=0.1MHz,
IC=3A, RL=10Ω,
µS
IB1=IB2=12mA,
VEB(off)=5V
www.taitroncomponents.com
Rev. A/AH 2008-06-13
Page 2 of 4