TIP115 Datasheet, PDF (2/4 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

Darlington Power Transistors (PNP)
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
TIP115/116/117
Symbol
Description
*hFE
D.C. Current Gain
*VCEO(sus)
Collector-Emitter Sustaining
Voltage
TIP115
TIP116
TIP117
*VCE(sat) Collector-Emitter Saturation Voltage
*VBE(on) Base-Emitter On Voltage
ICEO
Collector-Emitter Cut-off Current
ICBO
Collector-Base Cut-off Current
IEBO
Emitter-Base Cut-off Current
*Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Min.
1000
500
60
80
100
-
-
-
-
-
Max.
-
-
-
-
-
2.5
2.8
2.0
1.0
2.0
Unit
Conditions
VCE=4V, IC=1A
VCE=4V, IC=2A
V
V
IC=30mA, IB=0
V
V
IC=2A, IB=8mA
V
IC=2A, VCE=4V
mA VCE=Half Rated VCEO
mA VCB=Half Rated VCBO
mA
VEB=5V, IC=0
www.taitroncomponents.com
Rev. A/AH 2008-06-13
Page 2 of 4