TIP105 Datasheet, PDF (2/4 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

Darlington Power Transistors (PNP)
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
TIP105/106/107
Symbol
Description
*hFE
D.C. Current Gain
*VCEO(sus)
Collector-Emitter Sustaining
Voltage
TIP105
TIP106
TIP107
*VCE(sat) Collector-Emitter Saturation Voltage
*VBE(on) Base-Emitter On Voltage
ICEO
Collector-Emitter Cut-off
Current
TIP105
TIP106
TIP107
ICBO
Collector-Base Cut-off
Current
TIP105
TIP106
TIP107
IEBO
Emitter-Base Cut-off Current
*VF
Forward Voltage of Commutation Diode
*Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Min.
1000
200
60
80
100
-
-
-
-
-
-
-
-
-
-
-
Max.
20000
-
-
-
-
2.0
2.5
2.8
50
50
50
50
50
50
8.0
6.0
Unit
Conditions
VCE=4V, IC=3A
VCE=4V, IC=8A
V
V
IC=30mA, IB=0
V
V
IC=3A, IB=6mA
V
IC=8A, IB=80mA
V
IC=8A, VCE=4V
VCE=30V, IB=0
μA
VCE=40V, IB=0
VCE=50V, IB=0
VCB=60V, IE=0
μA
VCB=80V, IE=0
VCB=100V, IE=0
mA
VEB=5V, IC=0
V
IF=IC=10A, IB=0
www.taitroncomponents.com
Rev. A/AH 2008-06-13
Page 2 of 4