MMBTA42 Datasheet, PDF (2/3 Pages) NXP Semiconductors – NPN high-voltage transistor

SMD High Voltage Transistor (NPN)
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
Description
hFE
D.C. Current Gain
V(BR)CEO Collector-Emitter Breakdown Voltage
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
IEBO
Collector-Emitter Cut-off Current
ICBO
Collector-Base Cut-off Current
fT
Current Gain-Bandwidth Product
Cre
Feedback Capacitance
MMBTA42
Min.
Max.
25
-
40
-
40
-
300
-
300
-
6
-
-
0.5
-
0.9
-
0.1
-
0.1
50
-
-
3
Unit
V
V
V
V
V
μA
μA
MHz
pF
MMBTA42
Conditions
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
IC=1mA, IB=0
IC=100µA, IE=0
IE=100µA, IC=0
IC=20mA, IB=2mA
IC=20mA, IB=2mA
VBE=6V, IC=0
VCB=200V, IE=0
VCE=20V, IC=10mA,
f=35MHz
VCB=20V, IE=0,
f=1.0MHz,
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Rev. A/AH 2008-06-12
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