2N4400 Datasheet, PDF (2/4 Pages) ON Semiconductor – General Purpose Transistors(NPN Silicon)

Small Signal General Purpose Transistors (NPN)
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
2N4400/2N4401
Symbol
Description
V(BR)CBO
V(BR)CEO*
V(BR)EBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
VCE(sat) * Collector Emitter Saturation Voltage
VBE(sat) * Base Emitter Saturation Voltage
ICEV
IBEV
Collector Cut–Off Current
Base Cut–Off Current
hFE*
D.C. Current Gain
hie
hre
fT
CCBO
CEBO
hfe
hoe
td
tr
ts
tf
Input Impedance
Voltage Feedback Ratio
Current Gain-Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Small Signal Current Gain
Output Admittance
Delay Time
Rise Time
Storage Time
Fall Time
2N4400
2N4401
Min. Max. Min. Max.
60
-
60
-
40
-
40
-
6.0
-
6.0
-
- 0.40 - 0.40
- 0.75 - 0.75
0.75 0.95 0.75 0.95
- 1.20 - 1.20
- 100 - 100
- 100 - 100
-
-
20
-
20
-
40
-
40
-
80
-
50 150 100 300
20
-
40
-
0.5 7.5 1.0 15
0.1 8.0 0.1 8.0
200 - 250 -
-
6.5
-
6.5
-
30
-
30
20 250 40 500
1.0 30 1.0 30
-
15
-
15
-
20
-
20
- 225 - 225
-
30
-
30
Unit
V
V
V
V
V
nA
nA
kΩ
x10Ö¾⁴
MHz
pF
pF
μS
nS
nS
nS
nS
*Pulse Test: Pulse Width<300µs, Duty Cycle<2%
Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VEB=0.4V, VCE=35V
VEB=0.4V, VCE=35V
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IC=1mA
f=1KHz,
VCE=10V, IC=1mA
f=1KHz,
VCE=10V, IC=20mA,
f=100MHz
VCB=5V, IE=0
f=100KHz,
VEB=0.5V, IC=0
f=100KHz,
VCE=10V, IC=1mA
f=1KHz,
VCE=10V, IC=1mA
f=1KHz,
VCC=30V, VEB=2V
IC=150mA, IB1=15mA
VCC=30V, IC=150mA
IB1=IB2=15mA
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Rev. A/AH 2008-03-05
Page 2 of 4