1N4001G Datasheet, PDF (2/4 Pages) NXP Semiconductors – Rectifiers(Rugged glass package, using a high temperature alloyed construction)

1.0A General Purpose Silicon Rectifier
1N4001G~1N4007G
Electrical Characteristics (T _Ambient=25ºC unless noted otherwise)
Symbol
VF
IR
CJ
Rθ-JA
Description
Maximum Instantaneous Forward
current at 1.0A
Maximum DC
TA=25 ° C
Reverse current at
rated DC blocking
voltage
TA=125 ° C
Typical Junction Capacitance
Thermal Resistance Junction to Air
1N40
01G
1N40
02G
1N40
03G
1N40
04G
1.1
1N40
05G
5.0
50
15
50
1N40
06G
1N40
07G
Unit
V
µA
pF
° C/W
Note: 1. Measured at 1.0MHz and applied reverse voltage of 4.0 volts
2. Thermal Resistance from Junction to Ambient at .375" (9.5mm) lead length, P.C. board
mounted.
Typical Characteristics Curves
Fig.1- Forward Current Derating Curve
Fig.2- Max. Non-Repetitive Forward Surge Current
Ambient Temperature Ta (°C)
www.taitroncomponents.com
Number of Cycles at 60Hz
Rev. A/AJ 2006-08-07
Page 2 of 4