BAV99 Datasheet, PDF (1/5 Pages) NXP Semiconductors – High-speed double diode

Three Terminals
SMD Switching Diode
BAV99
Three Terminals SMD Switching Diode
Features
 Silicon Epitaxial Planar Diode
 Low Current Leakage
 Low Forward Voltage
 Fast Switching Dual Diode with Common Cathode
 RoHS Compliant
Mechanical Data
Case:
Terminals:
Weight:
SOT-23, Plastic Package
Solderable per MIL-STD-202G, Method 208
Approx. 0.008 gram
SOT-23
Maximum Ratings* (T Ambient=25ºC unless noted otherwise)
Symbol
Description
BAV99
Unit
Conditions
Marking Code
A7
VRRM
IF(AV)
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
70
V
215
mA
Average over any 20ms period
Pulse Width=1.0μs
2.0
IFSM
Non-Repetitive Peak
Forward Surge Current
A
Pulse Width=1.0s
1.0
Power Dissipation FR-5 Board at TA=25°C
Derate above 25°C
PD
Power Dissipation Alumina Substrate at
TA=25°C
Derate above 25°C
225
mW
Note 1
1.8
mW/°C
300
mW
Note 2
2.4
mW/°C
RthJA Thermal Resistance, Junction to Ambient
TJ,
TSTG
Operating Junction and Storage
Temperature Range
556
417
-55 to +150
°C/W
°C/W
°C
Note 1
Note 2
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Rev. B/AH
Page 1 of 5