BAV70 Datasheet, PDF (1/5 Pages) NXP Semiconductors – High-speed double diode

Three Terminals SMD Switching Diode
Features
• Silicon Epitaxial Planar Diode
• Fast Switching Dual Diode with Common Cathode
• RoHS Compliant
Mechanical Data
Case:
SOT-23, Plastic Package
Terminals: Solderable per MIL-STD-202G, Method 208
Weight:
Approx. 0.008 gram
Three Terminals
SMD Switching Diode
BAV70
SOT-23
Maximum Ratings* (T _Ambient=25ºC unless noted otherwise)
Symbol
Description
BAV70
Marking Code
A4/JA
VRRM Maximum Repetitive Reverse Voltage
70
IF(AV) Average Rectified Forward Current
200
Pulse Width=1.0s
1.0
IFSM
Non-Repetitive Peak
Forward Surge Current
Pulse Width=1.0μs
2.0
PD
Power Dissipation
350
RthJA Thermal Resistance, Junction to Ambient
357
TJ
Operating Junction Temperature
150
TSTG Storage Temperature Range
-55 to +150
Unit
V
mA
A
mW
° C/W
°C
°C
Conditions
Note: * These ratings are limiting values above which the serviceability of the diode may be
impaired.
1: These ratings are based on a maximum junction temperature of 150 degree C.
2: These are steady limits. The factory should be consulted on applications involving pulse or
low duty cycle operations.
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Rev. A/AH 2008-01-11
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