THN6501S Datasheet, PDF (2/13 Pages) Tachyonics CO,. LTD – NPN Planer RF TRANSISTOR

THN6501S
Electrical Characteristics ( T_A = 25 )
SYMBOL
PARAMETER
CONDITION
VALUE
Unit
VCBO
VCEO
ICBO
IEBO
hfe
f_T
CCB
Collector-Base Voltage ICE = 100uA, IE = 0
Collector-Emitter Voltage ICE = 100uA, IB = 0
Collector-Cut-off current VCB = 10V, IE = 0
Emitter-Cut-off current VEB = 1V, IC = 0
D.C Current Gain
VCE = 3V, Ic = 7mA
Transition Frequency
VCE = 3V, Ic = 7mA
Collector-Base Capacitance VCB = 10V, f = 1MHz
20 25
V
12 13
V
100 n A
100 n A
130
5
GHz
0.90
pF
Performance Characteristics
SYMBOL
PARAMETER
CONDITION
[S21]^{2 Insertion Power Gain}
VCE=3V, Ic=7mA,f=1GHz
VCE=3V, Ic=15mA,f=1GHz
MSG Maximum Stable Gain VCE=3V, Ic=7mA,f=1GHz
MAG Maximum Available Gain VCE=3V, Ic=15mA,f=1GHz
NFmin Minimum Noise Figure VCE=3V, Ic=7mA,f=1GHz
rn Noise Resistance
VCE=3V, Ic=7mA,f=1GHz
GA Associated Gain
VCE=3V, Ic=7mA,f=1GHz
VCE=3V, Ic=15mA,f=1GHz
OIP3 Output 3rd Intercept VCE=6V, Ic=15mA,f=1GHz
VALUE
9.5
11
14
14.5
1.0
0.056
12
12.5
27
Unit
dB
dB
dB
dB
dBm
www.tachyonics.co.kr
Aug-25-2003