THN6201S Datasheet, PDF (2/12 Pages) Tachyonics CO,. LTD – NPN Planer RF TRANSISTOR

THN6201S
Electrical Characteristics ( T_A = 25 )
SYMBOL
PARAMETER
CONDITION
VALUE
Unit
VCBO
VCEO
ICBO
IEBO
hfe
f_T
CCB
Collector-Base Voltage ICE = 100uA, IE = 0
Collector-Emitter Voltage ICE = 100uA, IB = 0
Collector-Cut-off current VCB = 10V, IE = 0
Emitter-Cut-off current VEB = 1V, IC = 0
D.C current Gain
VCE = 3V, Ic = 15mA
Transition Frequency
VCE = 3V, Ic = 15mA
Collector-Base Capacitance VCB = 10V, f = 1MHz
20 25
V
12 14
V
300 n A
100 n A
130
12
GHz
0.47
pF
Performance Characteristics
SYMBOL
PARAMETER
CONDITION
VCE=3V, Ic=5mA,f=1GHz
[S21]^{2 Insertion Power Gain}
VCE=3V, Ic=15mA,f=1GHz
VCE=3V, Ic=5mA,f=2GHz
VCE=3V, Ic=15mA,f=2GHz
MSG
Maximum Stable Gain
VCE=3V, Ic=5mA,f=1GHz
VCE=3V, Ic=15mA,f=1GHz
MAG
VCE=3V, Ic=5mA,f=2GHz
Maximum Available Gain
VCE=3V, Ic=15mA,f=2GHz
NFmin Minium Noise Figure
VCE=3V, Ic=5mA,f=1GHz
VCE=3V, Ic=5mA,f=2GHz
rn Noise Resistance
VCE=3V, Ic=5mA,f=1GHz
VCE=3V, Ic=5mA,f=2GHz
VCE=3V, Ic=5mA,f=1GHz
GA Associated Gain
VCE=3V, Ic=15mA,f=1GHz
VCE=3V, Ic=5mA,f=2GHz
VCE=3V, Ic=15mA,f=2GHz
P_-1dB
1dB Compression point
VCE=3V, Ic=15mA,f=1GHz
(Zs=Zsopt, ZL=ZLopt)
VALUE
13
14.5
7.5
8.5
16
16.5
10.5
11
1.1
1.5
0.06
0.04
14
15.5
9.5
10.5
10
Unit
dB
dB
dB
dB
dBm
www.tachyonics.co.kr
- 2/12 -
Aug-2003