English
Language : 

THN4201Z Datasheet, PDF (2/5 Pages) –
Preliminary
THN4201Z
Electrical Characteristics ( TA = 25 )
SYMBOL
PARAMETER
CONDITION
VALUE
Unit
VCBO
VCEO
ICBO
IEBO
hfe
fT
CCB
Collector-Base Voltage ICE = 100uA, IE = 0
Collector-Emitter Voltage ICE = 100uA, IB = 0
Collector-Cut-off current VCB = 10V, IE = 0
Emitter-Cut-off current VEB = 1V, IC = 0
D.C current Gain
VCE = 3V, Ic = 15mA
Transition Frequency
VCE = 3V, Ic = 20mA
Collector-Base Capacitance VCB = 10V, f = 1MHz
10 25
V
5.5 6
V
300 n A
100 n A
100 200 300
16.5
GHz
0.48
pF
Performance Characteristics
SYMBOL
PARAMETER
CONDITION
VCE=3V, Ic=5mA,f=2GHz
[S21]2 Insertion Power Gain
VCE=3V, Ic=15mA,f=2GHz
VCE=1V, Ic=3mA,f=2GHz
VCE=1V, Ic=10mA,f=2GHz
VCE=3V, Ic=5mA,f=2GHz
MAG
VCE=3V, Ic=15mA,f=2GHz
Maximum Available Gain
VCE=1V, Ic=3mA,f=2GHz
VCE=1V, Ic=10mA,f=2GHz
NFmin Minium Noise Figure
VCE=1V, Ic=3mA,f=2GHz
VCE=3V, Ic=5mA,f=2GHz
rn Noise Resistance
VCE=1V, Ic=3mA,f=2GHz
VCE=3V, Ic=5mA,f=2GHz
GA Associater Gain
VCE=3V, Ic=5mA,f=2GHz
VCE=1V, Ic=5mA,f=2GHz
VALUE
7.5
9.5
5.5
8.5
13
13.5
11.5
13
1.7
1.5
0.05
0.04
10
8.5
Unit
dB
dB
dB
www.tachyonics.co.kr
- 2/5 -
Preliminary