TMF3202Z Datasheet, PDF (1/8 Pages) Tachyonics CO,. LTD – N-Channel Dual-Gate MOSFET

Preliminary Specification
N-Channel Dual-Gate MOSFET
TMF3202Z
□ Description
The TMF3202Z is an enhancement type N-channel field-effect
transistor. The source and substrate are interconnected. Internal
bias circuits enable DC stabilization and a very good cross-
modulation performance during AGC. Integrated diodes between
the gates and source protect against excessive input voltage
surges. The transistor has a SOT343 micro-miniature plastic
package.
□ Features
- Gain controlled amplifier with AGC
- Integrated gate protection diodes
- High AGC-range, high gain, low noise figure
□ Applications
- Gain controlled input stage for UHF and VHF tuners
- Professional communications equipment
SOT343
Unit in mm
2
3
1
4
1. SOURCE 3. GATE 2
2. DRAIN 4. GATE 1
□ Absolute Maximum Ratings (T_a = 25 ℃)
Parameter
Drain-Source Voltage
Drain Current
Gate 1 Current
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Symbol
VDS
I_D
I_G1
P_tot
Ts tg
Tj
Ratings
10
30
±10
200
-65 ~ 150
150
Caution : Electro Static Discharge sensitive device, observe handling precaution
Unit
V
mA
mA
mW
℃
℃
October. 2005.
Page 1 of 8
http://www.tachyonics.co.kr
Rev. 1.0