TMF3201J Datasheet, PDF (1/8 Pages) Tachyonics CO,. LTD – Dual N-Channel Dual-Gate MOSFET

Preliminary Specification
Dual N-Channel Dual-Gate MOSFET
TMF3201J
□ Description
The TMF3201J is an N-channel enhancement type, dual-insulated
gate, field-effect transistor that utilizes MOS construction.
It is consists of two equal dual gate MOSFET amplifiers with
shared source and gate2 leads. The source and substrate are
interconnected. Internal bias circuits enable DC stabilization and a
very good cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against excessive
input voltage surges. The transistor has a SOT363 micro-
miniature plastic package.
SOT363
Unit in mm
□ Features
- Two AGC amplifiers in a single package
- Integrated gate protection diodes
- High AGC-range, high gain, low noise figure
□ Applications
-Two gain controlled input stage for UHF and VHF tuners
- Professional communications equipment
1. GATE 1(1)
2. GATE 2
3. GATE 1(2)
4. DRAIN (2)
5. SOURCE
6. DRAIN (1)
□ Absolute Maximum Ratings (T_a = 25 ℃)
P arame te r
Per MOSFET ; unless otherwise specified
Drain-Source Voltage
Drain Current
Gate 1 Current
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Symbol
VDS
I_D
I_G1
P_tot
Ts tg
Tj
Ratings
10
30
±10
200
-65 ~ 150
150
Caution : Electro Static Discharge sensitive device, observe handling precaution
Unit
V
mA
mA
mW
℃
℃
January 2005.
Page 1 of 8
http://www.tachyonics.co.kr
Rev. 1.0