P800A Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON RECTIFIER DIODES

P800A - P800K
SILICON RECTIFIER DIODES
PRV : 50 - 800 Volts
Io : 8.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Void-free molded plastic body
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 2.1 grams
D6
0.360 (9.1)
0.340 (8.6)
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specifie.d
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 50 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed on
rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage at IF = 8 A
Maximum DC Reverse Current Ta = 25 °C
at rated DC Blocking Voltage
Ta = 100 °C
Typical junction capacitance at 4.0V, 1MHz
Typical Thermal Resistance (1)
Junction Temperature Range
Storage Temperature Range
SYMBOL P800A P800B P800D P800G P800J P800K UNIT
VRRM
VRMS
VDC
50 100 200 400 600 800
V
35
70 140 280 420 560
V
50 100 200 400 600 800
V
IF(AV)
8.0
A
IFSM
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
400
1.0
5.0
1.0
150
20
- 50 to + 150
- 50 to + 150
A
V
μA
mA
pF
°C/W
°C
°C
Note :
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length,
P.C.B. mounted with 1.1” x 1.1” (30 x 30mm) copper pads
Page 1 of 2
Rev. 02 :March 24, 2005