LL5711 Datasheet, PDF (1/2 Pages) Diodes Incorporated – SCHOTTKY BARRIER SWITCHING DIODE

LL5711 and LL6263
SCHOTTKY BARRIER DIODES
V_RRM : 70V , 60V
MiniMELF (SOD-80C)
Cathode Mark
FEATURES :
• For general purpose applications
• Metal-on-silicon Schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices, steering, biasing and coupling diodes for
fast switching and low logic level applications.
• This diode is also available in the DO-35 case with
type designation 1N5711 and 1N6263.
• Pb / RoHS Free
φ 0.063 (1.64)
0.055 (1.40)
0.142(3.6)
0.134(3.4)
0.019(0.48)
0.011(0.28)
0.049 (1.25)Min.
Mounting Pad Layout
0.098 (2.50)
Max.
MECHANICAL DATA :
Case: MiniMELF Glass Case (SOD-80C)
Weight: approx. 0.05g
0.079 (2.00)Min.
0.197 (5.00)
REF
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Repetitive Peak Reverse Voltage
Power Dissipation (Infinite Heatsink)
Maximum Single Cycle Surge 10 µs Square Wave
Junction Temperature
Storage temperature range
LL5711
LL6263
Symbol
V_RRM
P_D
I_FSM
T_J
T_S
Value
70
60
400⁽¹⁾
2.0
125⁽¹⁾
-55 to + 150 ⁽¹⁾
Unit
V
mW
A
°C
°C
Electrical Characteristics (T_J = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Reverse Breakdown Voltage
Reverse Current
Forward Voltage Drop
Diode Capacitance
LL5711
LL6263
LL5711
LL6263
V_(BR)R
I_R
V_F
Cd
I_R = 10 µA
V_R = 50 V
I_F = 1mA
I_F = 15mA
V_R = 0 V, f = 1MHz
Reverse Recovery Time
Trr
I_F = I_R = 5mA,
recover to 0.1I_R
Note: (1) Valid provided that electrodes are kept at ambient temperature
Min
Typ
Max
Unit
70
-
-
V
60
-
-
-
-
200
nA
-
-
0.41
V
-
-
1.0
-
-
2.0
pF
-
-
2.2
-
-
1.0
ns
Page 1 of 2
Rev. 02 : March 24, 2005