LL4448 Datasheet, PDF (1/2 Pages) Semtech Corporation – Silicon Expitaxial Planar Diode

LL4448
FEATURES :
• High switching speed: max. 4 ns
• Reverse voltage:max. 75V
• Peak reverse voltage:max. 100 V
• Pb / RoHS Free
MECHANICAL DATA :
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05g
HIGH SPEED SWITCHING DIODE
MiniMELF (SOD-80C)
Cathode Mark
φ 0.063 (1.64)
0.055 (1.40)
0.142(3.6)
0.134(3.4)
0.019(0.48)
0.011(0.28)
0.049 (1.25)Min.
Mounting Pad Layout
0.098 (2.50)
Max.
0.079 (2.00)Min.
0.197 (5.00)
REF
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Maximum Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Continuous Forward Current
Maximum Average Forward Current ⁽¹⁾
Half Wave Rectification with Resistive Load , f ≥ 50 Hz
Maximum Surge Forward Current at t < 1s , Tj = 25°C
Maximum Power Dissipation ⁽¹⁾
Thermal Resistance Junction to Ambient Air ⁽¹⁾
Maximum Junction Temperature
Storage Temperature Range
Note : (1) Valid provided that electrodes are kept at ambient temperature
Symbol
V_RM
V_R
I_F
I_F(AV)
I_FSM
P_D
RθJA
T_J
T_S
Value
100
75
200
150
0.5
500
350
175
-65 to + 175
Unit
V
V
mA
mA
A
mW
°C/W
°C
°C
Electrical Characteristics (T_J = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Reverse Current
Forward Voltage
V_R = 20 V
I_R
V_R = 75 V
V_R = 20 V , Tj = 150 °C
V_F
I_F = 100 mA
Diode Capacitance
Cd
f = 1MHz ; V_R = 0
Reverse Recovery Time
Trr
I_F = 10 mA to I_R = 1mA
V_R = 6V , R_L = 100 Ω
Min. Typ. Max.
Unit
-
-
25
nA
-
-
5
µA
-
-
50
µA
-
-
1.0
V
-
-
4.0
pF
-
-
4.0
ns
Page 1 of 2
Rev. 02 : March 25, 2005