LL4153 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – HIGH SPEED SWITCHING DIODE

LL4153
FEATURES :
• High switching speed: max. 4 ns
• Continuous reverse voltage:max. 50 V
• Repetitive peak reverse voltage:max. 75 V
• Pb / RoHS Free
MECHANICAL DATA :
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05g
HIGH SPEED SWITCHING DIODE
MiniMELF (SOD-80C)
Cathode Mark
φ 0.063 (1.64)
0.055 (1.40)
0.142(3.6)
0.134(3.4)
0.019(0.48)
0.011(0.28)
0.049 (1.25)Min.
Mounting Pad Layout
0.098 (2.50)
Max.
0.079 (2.00)Min.
0.197 (5.00)
REF
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Continuous Forward Current
Maximum Surge Forward Current at t < 1s , Tj = 25°C
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Symbol
V_RM
V_R
I_F
I_FSM
P_D
T_J
T_S
Value
75
50
200
0.5
500
200
-65 to + 200
Unit
V
V
mA
A
mW
°C
°C
Electrical Characteristics (T_J = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min. Typ. Max.
Unit
Reverse Current
Forward Voltage
Diode Capacitance
I_R
V_R = 50 V
V_R = 50 V , Tj = 150 °C
-
-
-
0.05
µA
-
50
µA
V_F
I_F = 50 mA
-
-
0.88
V
Cd
f = 1MHz ; V_R = 0
-
-
2.0
pF
I_F = 10 mA to I_R = 10mA
Reverse Recovery Time
Trr
R_L = 100Ω ; measured
at I_R = 1mA
-
-
4
ns
Page 1 of 2
Rev. 02 : March 25, 2005