LL4150 Datasheet, PDF (1/2 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diodes

LL4150
FEATURES :
• High switching speed: max. 4 ns
• Continuous reverse voltage:max. 50 V
• Repetitive peak reverse voltage:max. 75 V
• Repetitive peak forward current: max. 600 mA
• Pb / RoHS Free
MECHANICAL DATA :
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05g
HIGH SPEED SWITCHING DIODE
MiniMELF (SOD-80C)
Cathode Mark
φ 0.063 (1.64)
0.055 (1.40)
0.142(3.6)
0.134(3.4)
0.019(0.48)
0.011(0.28)
0.049 (1.25)Min.
Mounting Pad Layout
0.098 (2.50)
Max.
0.079 (2.00)Min.
0.197 (5.00)
REF
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Maximum Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Continuous Current
Maximum Average Forward Current
Maximum Surge Forward Current at t < 1s and Tj = 25°C
Maximum Power Dissipation
Maximum Repetitive Peak Forward Current
Thermal Resistance Junction to Ambient Air ⁽¹⁾
Maximum Junction Temperature
Storage Temperature Range
Symbol
V_RM
V_R
I_F
I_F(AV)
I_FSM
P_D
I_FRM
R_θJA
T_J
T_S
Value
75
50
200
150
0.5
500
600
350
175
-65 to + 175
Unit
V
V
mA
mA
A
mW
mA
°C/W
°C
°C
Electrical Characteristics (T_J = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min. Typ. Max.
Unit
Reverse Current
Forward Voltage
Diode Capacitance
Reverse Recovery Time
I_R
V_R = 50 V
-
V_R = 50 V , Tj = 150 °C
-
V_F
I_F = 100 mA
I_F = 200 mA
-
-
Cd
f = 1MHz ; V_R = 0
-
I_F = 10 mA to 200 mA
Trr
to I_R = 10 mA to 200 mA;
-
R_L = 100 Ω ; measured
at I_R = 0.1x I_F
-
0.1
µA
-
100
µA
-
0.92
V
-
1.0
-
2.5
pF
-
4
ns
Page 1 of 2
Rev. 02 : March 25, 2005