LL41 Datasheet, PDF (1/1 Pages) General Semiconductor – Schottky Diodes

LL41
V_RRM : 100V
FEATURES :
• For general purpose applications
• This diode features low turn-on voltage and high
breakdown voltage. This device is protected by a
PN junction guard ring against excessive voltage,
such as electrostatic discharges
• This diode is also available in the DO-35 case with
type designation BAT41.
• Pb / RoHS Free
MECHANICAL DATA :
Case: MiniMELF Glass Case (SOD-80C)
Weight: approx. 0.05g
SCHOTTKY BARRIER DIODE
MiniMELF (SOD-80C)
Cathode Mark
φ 0.063 (1.64)
0.055 (1.40)
0.142(3.6)
0.134(3.4)
0.019(0.48)
0.011(0.28)
0.049 (1.25)Min.
Mounting Pad Layout
0.098 (2.50)
Max.
0.079 (2.00)Min.
0.197 (5.00)
REF
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Repetitive Peak Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current at tp < 1s
Forward Surge Current at tp = 10 ms,
Power Dissipation
Thermal Resistance Junction to Ambient Air
Junction Temperature
Ambient Operating Temperature Range
Storage temperature range
Symbol
V_RRM
I_F
I_FRM
I_FSM
PD
R_θJA
T_J
Ta
T_S
Value
100
100 ⁽¹⁾
350 ⁽¹⁾
750 ⁽¹⁾
400⁽¹⁾
300⁽¹⁾
125
-65 to + 125
-65 to + 150
Unit
V
mA
mA
mA
W
°C/W
°C
°C
°C
Electrical Characteristics (T_J = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Reverse Breakdown Voltage ⁽²⁾
Reverse Current ⁽²⁾
Forward Voltage ⁽²⁾
Diode Capacitance
Reverse Recovery Time
V_(BR)R
I_R
V_F
Cd
Trr
I_R = 100 µA
V_R = 50 V
V_R = 50 V , T_J = 100 °C
I_F = 1mA
I_F = 200mA
V_R = 1 V, f = 1MHz
I_F = 10mA, I_R = 10mA,
to I_R = 1mA , R_L = 100Ω
Note: (1) Valid provided that electrodes are kept at ambient temperature
(2) Pulse test, tp = 300µs
Page 1 of 1
Min
100
-
-
-
-
-
-
Typ
Max
Unit
110
-
V
-
100
nA
-
20
µA
0.4
0.45
V
-
1.0
2
-
pF
5
-
ns
Rev. 02 : March 24, 2005