HVR112 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – HIGH VOLTAGE RECTIFIER DIODES

HVR112 - HVR120
PRV : 1200 - 2000 Volts
Io : 1.0 Ampere
HIGH VOLTAGE
RECTIFIER DIODES
DO - 41
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 75°C
Maximum Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 1.0 A
Maximum DC Reverse Current Ta = 25°C
at Rated DC Blocking Voltage Ta = 100°C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Junction Temperature Range
Storage Temperature Range
SYMBOL HVR112 HVR114 HVR116 HVR118 HVR120
VRRM
1200
1400
1600
1800
2000
VRMS
840
980
1120
1260
1400
VDC
1200
1400
1600
1800
2000
IF(AV)
1.0
UNIT
V
V
V
A
IFSM
30
A
VF
IR
IR(H)
Cj
RθJA
TJ
TSTG
2.2
5.0
100
36
26
- 40 to + 150
- 40 to + 150
V
µA
µA
pF
°C/W
°C
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
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Rev. 02 : March 24, 2005