HER251 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – HIGH EFFICIENT RECTIFIER DIODES

HER251 - HER258
PRV : 50 - 1000 Volts
Io : 2.5 Amperes
HIGH EFFICIENT
RECTIFIER DIODES
D2A
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Pb / RoHS Free
MECHANICAL DATA :
* Case : D2A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.645 gram
0.161 (4.1)
0.154 (3.9)
0.040 (1.02)
0.0385 (0.98)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55 °C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 2.5 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
SYMBOL
HER
251
VRRM 50
VRMS
35
VDC
50
IF(AV)
IFSM
VF
IR
IR(H)
Trr
CJ
TJ
TSTG
HER
252
100
70
100
HER
253
200
140
200
1.1
50
HER
254
300
210
300
HER
255
400
280
400
HER
256
600
420
600
2.5
100
10
50
50
- 65 to + 150
- 65 to + 150
HER
257
800
560
800
1.7
75
HER
258
1000
700
1000
UNIT
V
V
V
A
A
V
µA
µA
ns
pf
°C
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 02 : March 24, 2005