BYV95A Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – AVALANCHE FAST RECOVERY RECTIFIER DIODES

BYV95A - BYV96E
PRV : 200 - 1000 Volts
Io : 1.5 Amperes
AVALANCHE FAST RECOVERY
RECTIFIER DIODES
D2
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Pb / RoHS Free
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
0.161 (4.10)
0.154 (3.90)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.284 (7.21)
0.268 (6.81)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 50 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS voltage
Maximum DC Blocking Voltage
Min. Avalanche Breakdown Voltage @ 100 µA
Maximum Average Forward Rectified Current
Lead Length 10 mm. ; Ttp = 65 °C
Peak Forward Surge Current single half sine wave
superimposed on rated load
Maximum Forward Voltage at IF = 3.0 Amps.
Maximum DC Reverse Current
TJ = 25 °C
at Rated DC Blocking Voltage
TJ = 165 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Thermal Resistance (Note 2)
Junction Temperature Range
Storage Temperature Range
SYMBOL BYV95A BYV95B BYV95C BYV96D BYV96E UNIT
VRRM
200
400
600
800 1000
V
VRMS
140
280
420
560
700
V
VDC
200
400
600
800 1000
V
VBR(min.)
300
500
700
900 1100
V
IF(AV)
1.5
A
IFSM
VF
IR
IR(H)
Trr
RθJA
TJ
TSTG
35
1.6
5.0
150
250
300
50
175
- 65 to + 175
A
V
µA
µA
ns
°C/W
°C
°C
Notes :
(1) Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 02 : March 24, 2005