BYV27 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Ultra fast low-loss controlled avalanche rectifiers

BYV27 SERIES
EPITAXIAL AVALANCHE DIODES
PRV : 50 - 200 Volts
Io : 2.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Very fast recovery
* Pb / RoHS Free
DO - 41
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.335 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL BYV27-50 BYV27-100 BYV27-150 BYV27-200 UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
50
Maximum Continuous Reverse Voltage
VR
50
Min. Reverse Avalanche Breakdown Voltage @ IR = 0.1 mA V(BR)R-min.
55
Maximum Average Forward Current Ttp = 85 °C (Note 1)
IF(AV)
Maximum Non-Repetitive Peak Forward Surge Current
IFSM
Maximum Repetitive Peak Forward Current
IFRM
Maximum Forward Voltage at IF = 3.0 Amps. (Note 2)
VF
Maximum Reverse Current at VR = VRRM max , Tj = 25 °C
IR
Maximum Reverse Current at VR = VRRM max , Tj = 165 °C
IR(H)
Maximum Reverse Recovery Time (Note 3)
Trr
Thermal Resistance - Junction to tie-point (Note 1)
Rth j-tp
Junction Temperature Range
TJ
Storage Temperature Range
TSTG
100
150
100
150
110
165
2.0
50
15
1.07
1.0
150
25
46
- 65 to + 175
- 65 to + 175
200
V
200
V
220
V
A
A
A
V
µA
µA
ns
K/W
°C
°C
Notes :
(1) Lead Length 10 mm.
(2) Measured under pulse conditions to avoid excessive dissipation.
(3) Switched from IF = 0.5A to IR = 1A.
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Rev. 03 : July 8, 2005