BY550-50 Datasheet, PDF (1/2 Pages) Jinan Gude Electronic Device – 5.0 AMP.SILICON RECTIFIERS

BY550-50 ~ BY550-1000 ^{SILICON RECTIFIER DIODES}
PRV : 50 - 1000 Volts
Io : 5.0 Amperes
DO - 201AD
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.929 grams
0.21 (5.33)
0.19 (4.83)
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
0.375 (9.53)
0.285 (7.24)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 60°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I F = 5.0 Amps.
Maximum DC Reverse Current
Ta = 25 °C
at rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
SYMBOL ^{BY550 BY550 BY550 BY550 BY550 BY550 BY550}
- 50 - 100 - 200 - 400 - 600 - 800 - 1000
VRRM
50 100 200 400 600 800 1000
VRMS
35 70 140 280 420 560 700
VDC
50 100 200 400 600 800 1000
UNIT
V
V
V
IF
5.0
A
IFSM
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
300
1.1
20
50
50
18
- 65 to + 175
- 65 to + 175
A
V
μA
μA
pF
°C/W
°C
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
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Rev. 03 : March 31, 2005