BAY80 Datasheet, PDF (1/2 Pages) NXP Semiconductors – General purpose diode

BAY80
FEATURES :
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage: max. 120 V
• Repetitive peak reverse voltage: max. 150 V
• Repetitive peak forward current: max. 625 mA.
• Pb / RoHS Free
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
SWITCHING DIODE
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
Cathode
Mark
0.020 (0.52)max.
1.00 (25.4)
min.
0.150 (3.8)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specifie.d)
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Continuous Forward Current
Maximum Average Forward Current
Maximum Repetitive Peak Forward Current
Maximum Non-repetitive Peak Forward Current at t = 1ms, Tj = 25 °C
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Symbol
V_RRM
V_RM
I_F
I_F(AV)
I_FRM
I_FSM
P_D
T_J
T_S
Value
150
120
250
200
625
1
400
175
-65 to + 175
Unit
V
V
mA
mA
mA
A
mW
°C
°C
Electrical Characteristics (T_J = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Reverse Current
Forward Voltage
I_R
V_R = 120 V
V_R = 120 V, Tj = 150°C
V_F
I_F = 10 mA
I_F = 50 mA
I_F = 100 mA
I_F = 150 mA
Diode Capacitance
Cd
f = 1MHz ; V_R = 0
Reverse Recovery Time
I_F = 30mA , I_R = 30mA
Trr
I_RR = 3mA , R_L = 100 Ω
measured at I_R = 3 mA
Min. Typ. Max. Unit
-
-
100
nA
-
-
100
μA
0.65
-
0.80
0.73
-
0.92
V
0.78
-
1.00
-
-
1.07
-
-
6
pF
-
-
50
ns
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Rev. 03 : January 28, 2006