BAX18 Datasheet, PDF (1/2 Pages) NXP Semiconductors – General purpose diode

BAX18
FEATURES :
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 75 V
• Repetitive peak forward current: max. 2 A.
• Pb / RoHS Free
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
SWITCHING DIODE
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
Cathode
Mark
0.020 (0.52)max.
1.00 (25.4)
min.
0.150 (3.8)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Continuous Forward Current
Maximum Average Forward Current
Maximum Repetitive Peak Forward Current
Maximum Non-repetitive Peak Forward Current at t = 10ms, Tj = 25°C
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Symbol
V_RRM
V_R
I_F
I_F(AV)
I_FRM
I_FSM
P_D
T_J
T_S
Value
75
75
500
400
2
9
450
200
-65 to + 200
Unit
V
V
mA
mA
A
A
mW
°C
°C
Electrical Characteristics (T_J = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Reverse Current
I_R
V_R = 75 V
V_R = 75 V, Tj = 150°C
Forward Voltage
V_F
I_F = 300 mA
Diode Capacitance
Cd
f = 1MHz ; V_R = 0
I_F = 30mA , I_R = 30mA
Reverse Recovery Time
Trr
I_RR = 3mA , R_L = 100 Ω
measured at I_R = 3 mA
Page 1 of 2
Min
Typ
Max
Unit
-
-
5
µA
-
-
100
-
-
1.0
V
-
-
35
pF
-
-
50
ns
Rev. 02 : March 25, 2005