BAW75 Datasheet, PDF (1/2 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diode

BAW75 ~ BAW76
FEATURES :
• High switching speed: max. 4 ns
• Reverse voltage:max. 25V , 50V
• Peak reverse voltage:max. 35V, 75 V
• Pb / RoHS Free
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
HIGH SPEED SWITCHING DIODES
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
Cathode
Mark
0.020 (0.52)max.
1.00 (25.4)
min.
0.150 (3.8)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Maximum Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Average Forward Current
Half Wave Recitication with Resistive Load , f ≥ 50Hz
Maximum Power Dissipation
Maximum Surge Forward Current at t < 1µs , Tj = 25 °C
Maximum Junction Temperature
Storage Temperature Range
BAW75
BAW76
BAW75
BAW76
Symbol
V_RM
V_RM
I_F(AV)
P_D
I_FSM
T_J
T_S
Value
25
50
35
75
150 ⁽¹⁾
500 ⁽¹⁾
2
200
-65 to + 200
Note : (1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
Electrical Characteristics (T_J = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Reverse Current
Forward Voltage
BAW75
BAW76
BAW75
BAW76
I_R
V_R = 25 V
V_R = 50 V
V_F
I_F = 30 mA
I_F = 100 mA
Reverse Breakdown Voltage
BAW75
BAW76
V_(BR)R
Test with 5µA pulses
Diode Capacitance
BAW75
BAW76
Cd
f = 1MHz ; V_R = 0
Reverse Recovery Time
Trr
I_F = 10 mA , I_R = 10 mA
Irr = 1mA
Min
Typ
Max
-
-
100
-
-
100
-
-
1.0
-
-
1.0
35
-
-
75
-
-
-
-
4.0
-
-
2.0
-
-
4
Unit
V
V
mA
mW
A
°C
°C
Unit
nA
V
V
pF
ns
Page 1 of 2
Rev. 02 : March 25, 2005