BAW62 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diode

BAW62
FEATURES :
• High switching speed: max. 4 ns
• Continuous reverse voltage:max. 75 V
• Repetitive peak reverse voltage:max. 75 V
• Repetitive peak forward current: max. 450 mA
• Pb / RoHS Free
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
HIGH SPEED SWITCHING DIODE
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
Cathode
Mark
0.020 (0.52)max.
1.00 (25.4)
min.
0.150 (3.8)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Continuous Forward Current
Maximum Power Dissipation
Maximum Repetitive Peak Forward Current
Maximum Non-repetitive Peak Forward Current at t = 1s
Maximum Junction Temperature
Storage Temperature Range
Symbol
V_RRM
V_RM
I_F
P_D
I_FRM
I_FSM
T_J
T_S
Value
75
75
250
350
450
0.5
200
-65 to + 200
Unit
V
V
mA
mW
mA
A
°C
°C
Electrical Characteristics (T_J = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Current
Forward Voltage
Diode Capacitance
Reverse Recovery Time
I_R
V_R = 75 V
-
V_R = 75 V , Tj = 150 °C
-
V_F
I_F = 100 mA
-
Cd
f = 1MHz ; V_R = 0
-
I_F = 10 mA to I_R = 10 mA
Trr
R_L = 100 Ω ; measured
-
at I_R = 1mA
-
5
µA
-
100
-
1.0
V
-
2.0
pF
-
4
ns
Page 1 of 2
Rev. 02 : March 25, 2005