BAT41 Datasheet, PDF (1/1 Pages) STMicroelectronics – SMALL SIGNAL SCHOTTKY DIODE

BAT41
V_RRM : 100V
FEATURES :
• For general purpose applications
• This diode features low turn-on voltage and high
breakdown voltage. This device is protected by a
PN junction guard ring against excessive voltage,
such as electrostatic discharges
• This diode is also available in a MiniMELF case
with type designation LL41
• Pb / RoHS Free
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
SCHOTTKY BARRIER DIODE
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
Cathode
Mark
0.020 (0.52)max.
1.00 (25.4)
min.
0.150 (3.8)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Repetitive Peak Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current at tp < 1s
Forward Surge Current at tp = 10 ms,
Power Dissipation
Thermal Resistance Junction to Ambient Air
Junction Temperature
Ambient Operating Temperature Range
Storage temperature range
Symbol
V_RRM
I_F
I_FRM
I_FSM
P_D
R_θJA
T_J
Ta
T_S
Value
100
100 ⁽¹⁾
350 ⁽¹⁾
750 ⁽¹⁾
400⁽¹⁾
300⁽¹⁾
125
-65 to + 125
-65 to + 150
Unit
V
mA
mA
mA
W
°C/W
°C
°C
°C
Electrical Characteristics (T_J = 25°C unless otherwise noted)
Parameter
Symbol Test Condition
Reverse Breakdown Voltage ⁽²⁾
V_(BR)R
I_R = 100 µA
Reverse Current ⁽²⁾
I_R
V_R = 50 V
V_R = 50 V , T_J = 100 °C
Forward Voltage Drop ⁽²⁾
V_F
I_F = 1mA
I_F = 200mA
Diode Capacitance
Cd
V_R = 0 V, f = 1MHz
Reverse Recovery Time
Trr
I_F = 10mA, I_R = 10mA,
Irr = 1mA , R_L = 100Ω
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
(2) Pulse test, tp = 300µs
Page 1 of 1
Min
100
-
-
-
-
-
-
Typ
Max
Unit
110
-
V
-
100
nA
-
20
µA
0.4
0.45
V
-
1.0
2
-
pF
5
-
ns
Rev. 02 : March 24, 2005