1S2076A Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator

1S2076A
PRV : 70 Volts
Io : 150 mA
FEATURES :
* Silicon Epitaxial Planar Diode
* High reliability
* Low reverse current
* Low forward voltage drop
* High speed switching
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-35 Glass Case
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.13 gram (approximately)
HIGH SPEED SWITCHING DIODE
DO - 35
0.079(2.0 )max.
0.020 (0.52)max.
1.00 (25.4)
min.
0.150 (3.8)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Average Forward Current
Maximum Non-Repetitive Peak Forward Current (t < 1s)
Maximum Power Dissipation , Ta = 25 °C
Maximum Forward Voltage at IF = 10 mA
Maximum Reverse Current
at VR = 30V
Maximum Reverse Recovery Time
(IF = 10mA, VR = 6V , RL = 50Ω)
Maximum Capacitance Between Lead
(VR = 1 V, f = 1MHz)
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VR
IF(AV)
IFSM
PD
VF
IR
Trr
C
TJ
TSTG
VALUE
70
60
150
1.0
250
0.8
100
4.0
3.0
175
- 65 to + 175
UNIT
V
V
mA
A
mW
V
nA
ns
pF
°C
°C
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Rev. 02 : March 25, 2005