1N914 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diode

1N914/A/B
FEATURES :
• High switching speed: max. 4 ns
• Continuous reverse voltage:max. 75 V
• Repetitive peak reverse voltage:max. 100 V
• Repetitive peak forward current: max. 225 mA
• Pb / RoHS Free
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
HIGH SPEED SWITCHING DIODES
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
Cathode
Mark
0.020 (0.52)max.
1.00 (25.4)
min.
0.150 (3.8)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Continuous Forward Current
Maximum Power Dissipation
Maximum Repetitive Peak Forward Current
Maximum Non-repetitive Peak Forward Current at t = 1s
Maximum Junction Temperature
Storage Temperature Range
Symbol
V_RRM
V_RM
I_F
P_D
I_FRM
I_FSM
T_J
T_S
Value
100
75
75
250
225
0.5
175
-65 to + 200
Unit
V
V
mA
mW
mA
A
°C
°C
Electrical Characteristics (T_J = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Current
1N914
I_R
V_R = 20 V
V_R = 20 V , Tj = 150 °C
I_F = 10 mA
-
-
25
nA
-
-
50
μA
-
-
1.0
V
Forward Voltage
Diode Capacitance
1N914A
1N914B
1N914B
V_F
I_F = 20 mA
I_F = 5 mA
I_F = 100 mA
Cd
f = 1MHz ; V_R = 0
-
-
1.0
V
0.62
-
0.72
V
-
-
1.0
V
-
-
4.0
pF
I_F = 10 mA to I_R = 60 mA
Reverse Recovery Time
Trr
R_L = 100 Ω ; measured
-
-
4
ns
at I_R = 1mA
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Rev. 03 : March 25, 2005