1N5391 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes)

1N5391 - 1N5399
PRV : 50 - 1000 Volts
Io : 1.5 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
SILICON RECTIFIERDIODES
DO - 41
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 70°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.5 Amps.
Maximum DC Reverse Current
Ta = 25 °C
at rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
SYMBOL
1N
5391
1N
5392
1N
5393
1N
5394
1N
5395
1N
5396
1N
5397
1N
5398
1N
5399
VRRM 50 100 200 300 400 500 600 800 1000
VRMS 35 70 140 210 280 350 420 560 700
VDC
50 100 200 300 400 500 600 800 1000
UNIT
V
V
V
IF
1.5
A
IFSM
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
50
1.4
5.0
50
15
26
- 65 to + 175
- 65 to + 175
A
V
µA
µA
pF
°C/W
°C
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 01 : January 10, 2004