1N4449 Datasheet, PDF (1/2 Pages) SynSemi, Inc. – HIGH SPEED SWITCHING DIODE

1N4449
FEATURES :
• High switching speed: max. 4 ns
• Reverse voltage:max. 75V
• Peak reverse voltage:max. 100 V
• Pb / RoHS Free
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
HIGH SPEED SWITCHING DIODE
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
Cathode
Mark
0.020 (0.52)max.
1.00 (25.4)
min.
0.150 (3.8)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics ( Ta = 25 °C)
Parameter
Maximum Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Forward DC Current
Maximum Average Forward Current
Maximum Surge Forward Current at tp = 1 µs
Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Symbol
V_RM
V_R
I_F
I_F(AV)
I_FSM
P_D
T_J
T_STG
Value
100
75
200
150
2
500
200
-65 to + 200
Unit
V
V
mA
mA
A
mW
°C
°C
Electrical Characteristics ( Ta = 25 °C)
Parameter
Symbol
Reverse Current
I_R
Forward Voltage
V_F
Reverse Breakdown Voltage
Diode Capacitance
V_(BR)R
Cd
Reverse Recovery Time
Trr
Test Condition
V_R = 20 V
V_R = 20 V , Tj = 150 °C
I_F = 5 mA
I_F = 30 mA
I_R = 100 μA (pulsed)
f = 1MHz ; V_R = 0
I_F = 10 mA ,V_R = 6 V,
R_L = 100 Ω
Min. Typ. Max. Unit
-
-
25
nA
-
-
50
μA
0.63
-
0.73
V
-
-
1.0
100
-
-
V
-
-
2
pF
-
-
4
ns
Page 1 of 2
Rev. 01 : May 9, 2006