1N4448 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SIGNAL DIODE

1N4448
FEATURES :
• High switching speed: max. 4 ns
• Reverse voltage:max. 75V
• Peak reverse voltage:max. 100 V
• Pb / RoHS Free
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
HIGH SPEED SWITCHING DIODE
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
Cathode
Mark
0.020 (0.52)max.
1.00 (25.4)
min.
0.150 (3.8)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Symbol
Maximum Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Continuous Forward Current
Maximum Average Forward Current ⁽¹⁾
Half Wave Rectification with Resistive Load , f ≥ 50 Hz
Maximum Surge Forward Current at t < 1s , Tj = 25°C
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
V_RM
V_R
I_F
I_F(AV)
I_FSM
P_D
T_J
T_S
Note : (1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature
Value
100
75
200
150
0.5
500
175
-65 to + 175
Unit
V
V
mA
mA
A
mW
°C
°C
Electrical Characteristics (T_J = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Reverse Current
Forward Voltage
I_R
V_R = 20 V
V_R = 20 V , Tj = 150 °C
V_F
I_F = 10 mA
Reverse Breakdown Voltage
Diode Capacitance
V_(BR)R
Cd
I_R = 100 µA (pulsed)
f = 1MHz ; V_R = 0
Reverse Recovery Time
Trr
I_F = 10 mA to I_R = 1mA
V_R = 6V , R_L = 100 Ω
Min. Typ. Max.
Unit
-
-
25
nA
-
-
50
µA
-
-
1.0
V
100
-
-
V
-
-
4.0
pF
-
-
4.0
ns
Page 1 of 2
Rev. 02 : March 25, 2005