1N4154 Datasheet, PDF (1/2 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diode

1N4154
FEATURES :
• High switching speed: max. 2 ns
• Reverse voltage:max. 25 V
• Repetitive peak reverse voltage:max. 35 V
• Pb / RoHS Free
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
HIGH SPEED SWITCHING DIODE
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
Cathode
Mark
0.020 (0.52)max.
1.00 (25.4)
min.
0.150 (3.8)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Ta = 25 °C unless otherwise noted)
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Average Forward Current
Maximum Forward Current
Maximum Repetitive Peak Forward Current
Maximum Peak Forward Surge Current at tp = 1µs
Thermal Resistance Junction to Ambient (l =4mm, T_L = constant)
Power Dissipation (l = 4mm, T_L ≤ 25 °C)
Operating Junction Temperature
Storage Temperature Range
Symbol
V_RRM
V_R
I_F(AV)
I_F
I_FRM
I_FSM
R_Ó¨JA
P_D
T_J
T_STG
Value
35
25
150
300
500
2.0
350
500
175
-65 to + 175
Electrical Characteristics (Ta = 25 °C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Reverse Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
I_R
V_R = 25 V
-
V_R = 25 V , Ta = 150 °C
-
V_F
I_F = 30 mA
-
V_(BR)R
I_R = 5 µA ,tp/T =0.01,tp=0.3ms
35
Cd
f = 1MHz ; V_R = 0, V_HF = 50mV
-
I_F = I_R = 10 mA, i_R = 1 mA
-
Trr
I_F = 10 mA , V_R = 6 V,
-
R_L = 100 Ω, i_R= 0.1 x I_R
9
100
-
100
0.88
1.0
-
-
-
4
-
4
-
2
Unit
V
V
mA
mA
mA
A
K/W
mW
°C
°C
Unit
nA
µA
V
V
pF
ns
ns
Page 1 of 2
Rev. 01 : May 9, 2006