1N4152 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – Small Signal Diode

1N4152
FEATURES :
• High switching speed: max. 4 ns
• Peak reverse voltage:max. 40 V
• Pb / RoHS Free
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
HIGH SPEED SWITCHING DIODE
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
Cathode
Mark
0.020 (0.52)max.
1.00 (25.4)
min.
0.150 (3.8)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Ta = 25 °C unless otherwise noted)
Parameter
Maximum Peak Reverse Voltage
Maximum Average Forward Current
Maximum Non-repetitive Peak Forward Surge Current at tp = 1s
at tp =1 µs
Thermal Resistance Junction to Ambient
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Symbol
V_RM
I_F(AV)
I_FSM
R_Ó¨JA
P_D
T_J
T_STG
Value
75
150
1.0
4.0
300
500
175
-65 to + 200
Electrical Characteristics (Ta = 25 °C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Reverse Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
I_R
V_R = 30 V
-
-
50
V_R = 30 V , Ta = 150 °C
-
-
50
I_F = 0.1 mA
0.49
-
0.55
I_F = 0.25 mA
0.53
-
0.59
V_F
I_F = 1.0 mA
I_F = 2.0 mA
0.59
-
0.67
0.62
-
0.70
I_F = 10 mA
0.70
-
0.81
I_F = 20 mA
0.74
-
0.88
V_(BR)R
I_R = 5 µA
40
-
-
Cd
f = 1MHz ; V_R = 0
-
-
2.0
Trr1
I_F = I_R = 10 mA,
R_L = 100 Ω, Irr = 1mA
-
-
4
Trr2
I_F = 10 mA , V_R = 6 V,
-
-
2
R_L = 100 Ω, Irr = 1 mA
Unit
V
mA
A
°C/W
mW
°C
°C
Unit
nA
µA
V
V
pF
ns
ns
Page 1 of 1
Rev. 01 : May 9, 2006