1N4151 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diodes

1N4151
FEATURES :
• High switching speed: max. 4 ns
• Reverse voltage:max. 50 V
• Peak reverse voltage:max. 75 V
• Pb / RoHS Free
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
HIGH SPEED SWITCHING DIODE
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
Cathode
Mark
0.020 (0.52)max.
1.00 (25.4)
min.
0.150 (3.8)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Maximum Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Continuous Forward Current
Maximum Average Forward Current
Half Wave Rectification with Resistive Load , f ≥ 50Hz ⁽¹⁾
Maximum non-repetitive peak forward current at t = 1s
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Symbol
V_RM
V_R
I_F
I_F(AV)
I_FSM
P_D
T_J
T_S
Value
75
50
200
150
0.5
500
175
-65 to + 175
Unit
V
V
mA
mA
A
mW
°C
°C
Electrical Characteristics (T_J = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
I_R
V_R = 50 V
-
V_R = 50 V , Tj = 150 °C
-
V_F
I_F = 50 mA
-
V_(BR)R
I_R = 5A (pulsed)
75
Cd
f = 1MHz ; V_R = 0
-
Trr
I_F = 10 mA to I_R = 10mA
-
to I_R = 1mA
-
0.05
µA
-
50
µA
-
1.0
V
-
-
V
-
2.5
pF
-
4
ns
Page 1 of 2
Rev. 02 : March 25, 2005