1N4150 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diodes"

1N4150
FEATURES :
• High switching speed: max. 4 ns
• Continuous reverse voltage:max. 50 V
• Repetitive peak reverse voltage:max. 75 V
• Repetitive peak forward current: max. 600 mA
• Pb / RoHS Free
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
HIGH SPEED SWITCHING DIODE
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
Cathode
Mark
0.020 (0.52)max.
1.00 (25.4)
min.
0.150 (3.8)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Continuous Forward Current
Maximum Power Dissipation
Maximum Repetitive Peak Forward Current
Maximum Surge Forward Current at t = 1s , Tj = 25°C
Maximum Junction Temperature
Storage Temperature Range
Symbol
V_RRM
V_RM
I_F
P_D
I_FRM
I_FSM
T_J
T_S
Value
75
50
200
500
600
0.5
200
-65 to + 200
Unit
V
V
mA
mW
mA
A
°C
°C
Electrical Characteristics (T_J = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min. Typ. Max.
Unit
Reverse Current
Forward Voltage
Diode Capacitance
I_R
V_R = 50 V
-
-
0.1
µA
V_R = 50 V , Tj = 150 °C
-
-
100
µA
V_F
I_F = 100 mA
I_F = 200 mA
-
-
0.92
V
-
-
1.0
Cd
f = 1MHz ; V_R = 0
-
-
2.5
pF
Reverse Recovery Time
I_F = 10 mA to 200 mA
Trr
to I_R = 10 mA to 200 mA;
-
-
4
ns
R_L = 100 Ω ; measured
at I_R = 0.1x I_F
Page 1 of 2
Rev. 02 : March 25, 2005