1N4148WS Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – SURFACE MOUNT SWITCHING DIODES

1N4148WS
PRV : 100 Volts
I_O : 150 mA
FEATURES :
* Silicon Epitaxial Planar Diode
* Fast switching diodes.
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SOD-323 plastic Case
* Weight : approx. 0.004 g
* Marking Code : " W2"
SMALL SIGNAL
FAST SWITCHING DIODE
SOD-323
1.80
1.60
2.80
2.30
Dimensions in millimeters
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Parameter
Reverse Voltage
Peak Reverse Voltage
Average Rectified Current Half Wave
Rectification with Resistive Load at f ≥ 50 Hz
Surge Forward Current at t < 1 s and Tj = 25 °C
Power Dissipation at T_amb = 25 °C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Symbol
V_R
V_RM
I_F(AV)
I_FSM
P_tot
R_thJA
Tj
T_STG
Value
75
100
150 ¹⁾
350
200 ¹⁾
650 ¹⁾
150
-65 to + 150
ELECTRICAL CHARACTERISTICS (Rating at Ta = 25 °C unless otherwise specified)
Parameter
Forward Voltage
Leakage Current
Capacitance
Voltage Rise when Switching On
(tested with 50 mA pulses)
Reverse Recovery Time
Rectification Efficiency
Test Conditions
I_F = 10 mA
V_R = 20 V
V_R = 75 V
V_R = 20 V, Tj =150 °C
V_F = V_R = 0 V
t_p = 0.1µs, Rise Time < 30ns,
f_p = 5 to 100 kHz
I_F = 10 mA, I_R = 1 mA,
V_R = 6 V, R_L = 100 Ω
f = 100 MHz, V_RF = 2 V
Note : (1) Valid provided that electrodes are kept at ambient temperature.
Symbol
V_F
I_R
I_R
I_R
C_tot
V_fr
Trr
η_v
Min.
-
-
-
-
-
-
-
0.45
Typ.
-
-
-
-
-
-
-
-
Max.
1.0
25
5.0
50
4
2.5
4
-
Unit
V
V
mA
mA
mW
°C/W
°C
°C
Unit
V
nA
µA
µA
pF
V
ns
-
Page 1 of 3
Rev. 06 : May 22, 2006