1A1 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – MINIATURE PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere)

1A1 ~ 1A7
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
SILICON RECTIFIER DIODES
R-1
FEATURES :
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.20 gram
0.099 (2.51)
0.95 (2.42)
0.024 (0.6)
0.020 (0.5)
1.00 (25.4)
MIN.
0.138 (3.5)
0.114 (2.9)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 50 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.0 A.
Maximum DC Reverse Current Ta = 25 °C
at rated DC Blocking Voltage Ta = 100 °C
Typical Junction Capacitance (1)
Typical Thermal Resistance (2)
Junction Temperature Range
Storage Temperature Range
SYMBOL 1A1 1A2 1A3 1A4 1A5 1A6 1A7 UNIT
VRRM
VRMS
VDC
50 100 200 400 600 800 1000 V
35
70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
IF(AV)
1.0
A
IFSM
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
30
1.1
5.0
50
15
50
- 65 to + 125
- 65 to + 150
A
V
µA
µA
pF
°C/W
°C
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal Resistance from Junction to Ambient 0.375" (9.5mm) Lead Length
Page 1 of 2
Rev. 02 : January 10, 2004