SPP9517 Datasheet, PDF (3/8 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET

SPP9517
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±20V
VDS=-36V,VGS=0V
IDSS _{VDS=-36V,VGS=0V}
TJ=85℃
ID(on) VDS= -5V,VGS =-4.5V
RDS(on)
VGS=-10V,ID=-10A
VGS=-4.5V,ID=- 8A
gfs VDS=-15V,ID=-5.7A
VSD IS=-2.3A,VGS =0V
-40
V
-0.8
-2.5
±100 nA
-1
uA
-10
-10
A
0.012
0.017
0.016
0.022
Ω
13
S
-0.8 -1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V,VGS=-5.0V
ID= -10.0A
VDS=-20V,VGS=0V
f=1MHz
VDD=-15V,RL=15Ω
ID≡-1.0A,VGEN=-10.0V
RG=6Ω
40
55
10
nC
14
2300
280
pF
240
20
25
15
25
nS
60
90
40
60
2009/08/20 Ver.1
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