SPP9435W Datasheet, PDF (3/8 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET

SPP9435W
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±20V
VDS=-24V,VGS=0V
IDSS _{VDS=-24V,VGS=0V}
TJ=55℃
ID(on) VDS= -5V,VGS =-4.5V
RDS(on)
VGS=-10V,ID=-6.5A
VGS=-4.5V,ID=-5.0A
gfs VDS=-15V,ID=-5.7A
VSD IS=-1.3A,VGS =0V
-30
V
-0.8
-3.0
±100 nA
-1
uA
-5
-10
A
0.055 0.070
0.070 0.090
Ω
13
S
-0.87 -1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V,VGS=-10V
ID= -3.5A
VDS=-15V,VGS=0V
f=1MHz
VDD=-15V,RL=15Ω
ID≡-1.0A,VGEN=-10V
RG=6Ω
10
18
1.6
nC
3.0
450
95
pF
55
8
18
8
18
nS
25
50
25
35
2011/10/04 Ver.3
Page 3