SPP8637 Datasheet, PDF (3/6 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET

SPP8637
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min. Typ Max. Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Gate Resistance
Forward Transconductance
Diode Forward Voltage
V(BR)DSS VGS=0V,ID=-250uA
-30
VGS(th) VDS=VGS,ID=-250uA
-1.0
IGSS VDS=0V,VGS=±20V
VDS=-30V,VGS=0V
IDSS
VDS=-24V,VGS=0V, TJ=100℃
ID(on) VDS≥-5V,VGS =-10V
RDS(on)
VGS= -10V,ID=-30A
VGS=-4.5V,ID=-20A
Rg VDS=0V, VGS=0V, f=1MHz
gfs VDS=-10V,ID=-3A
VSD IS=-1A,VGS =0V
V
-2.5
±100 nA
-1
uA
-10
-100 A
7
11.4
8.5
14.5
mΩ
8.5 12
14
S
-1 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V, VGS=-4.5V
ID= -10A
VDS=-15VGS=0V
f=1MHz
VDD=-15V,
ID=-1A,VGS=-10V, RG=6Ω
35
11
nC
10.5
3300
410
pF
280
24.5
10.5
nS
156
50
2017/1/05 Ver.1
Page 3