SPP7001K Datasheet, PDF (3/7 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET

SPP7001K
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±20V
VDS=-60V,VGS=0V
IDSS _{VDS=-60V,VGS=0V}
TJ=55℃
ID(on) VDS≦-5V,VGS=-10V
RDS(on)
VGS=- 10V,ID=-0.5A
VGS=-4.5V,ID=-0.25A
gfs VDS=-10V,ID=-0.5A
VSD IS=-0.2A,VGS=0V
-60
V
-1
-3
±10 uA
-1
uA
-10
-1
A
6
10
Ω
1
S
-1.5 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
td(off)
VDS=-30V, VGS=-15V
ID= -0.5A
VDS=-25V,VGS=0V
f=1MHz
VDD=-25V, ID=-200mA,
VGEN=-10V
2
0.53
nC
0.72
25
13
pF
7.3
20
nS
35
2015/04/20 Ver.1
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