SPP4931_10 Datasheet, PDF (3/8 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET

SPP4931
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±12V
VDS=-16V,VGS=0V
IDSS _{VDS=-20V,VGS=0V}
TJ=55℃
ID(on) VDS≦-5V,VGS=-4.5V
VGS=- 4.5V,ID=-8.5A
RDS(on) VGS=- 2.5V,ID=-8.0A
VGS=- 1.8V,ID=-5.0A
gfs VDS=-5.0V,ID=-10.0A
VSD IS=-2.5A,VGS=0V
-20
-0.35
V
-0.9
±100 nA
-1
uA
-10
-20
A
0.016 0.020 _Ω
0.020 0.025
0.028 0.035
36
S
-0.8 -1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-10V,VGS=-5.0V
ID≡-10.0A
VDS=-10V,VGS=0V
f=1MHz
VDD=-10V,RL=15Ω
ID≡-1.0A,VGEN=-4.5V
RG=6Ω
30
45
4.5
nC
8.0
2670
520
pF
480
25
40
45
70
ns
145 240
70 115
2010/03/20 Ver.2
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