SPP3407 Datasheet, PDF (3/8 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET

SPP3407
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±20V
VDS=-24V,VGS=0V
IDSS _{VDS=-24V,VGS=0V}
TJ=55℃
ID(on) VDS≦-5V,VGS=-10V
RDS(on)
VGS=- 10V,ID=-4.0A
VGS=-4.5V,ID=-3.2A
gfs VDS=-5.0V,ID=-4.0A
VSD IS=-1.0A,VGS=0V
-30
V
-1.0
-3.0
±100 nA
-1
uA
-10
-10
A
0.045 0.060 _Ω
0.060 0.080
10
S
-0.8 -1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V,VGS=-10V
ID≡-4.0A
VDS=-15V,VGS=0V
f=1MHz
VDD=-15V,RL=15Ω
ID≡-1.0A,VGEN=-10V
RG=6Ω
14
21
1.9
nC
3.7
540
131
pF
105
10
15
15
25
ns
31
50
20
30
2006/09/20 Ver.1
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