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SPP3403 Datasheet, PDF (3/8 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET
SPP3403
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±12V
VDS=-24V,VGS=0V
IDSS VDS=-24V,VGS=0V
TJ=85℃
ID(on) VDS= -5V,VGS =-4.5V
RDS(on)
gfs
VGS=-10V,ID=-2.8A
VGS=-4.5V,ID=-2.5A
VGS=-2.5V,ID=-1.5A
VGS=-1.8V,ID=-1.0A
VDS=-10V,ID=-2.8A
VSD IS=-1.2A,VGS =0V
-30
V
-0.4
-1.0
±100 nA
-1
uA
-5
-4
A
0.080 0.100
0.100 0.110 Ω
0.130 0.145
0.160 0.200
4
S
-0.8 -1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V ,VGS=-4.5V
ID≡-2.0A
VDS=-15V ,VGS=0V
f=1MHz
VDD=-15V ,RL=15Ω
ID≡-1.0A ,VGEN=-10V
RG=3Ω
5.8
0.8
nC
1.5
380
55
pF
40
6
3.9
ns
40
15
2006/05/26 Ver.4
Page 3